Strained Silicon Heterostructures,9780852967782

Strained Silicon Heterostructures

by ; ;
ISBN13: 9780852967782
ISBN10: 0852967780
Format: Hardcover
Pub. Date: 2001-05-01
Publisher(s): Inst of Engineering & Technology
List Price: $160.00

Rent Textbook

Select for Price
Add to Cart
There was a problem. Please try again later.

New Textbook

We're Sorry
Sold Out

Used Textbook

We're Sorry
Sold Out

eTextbook

We're Sorry
Not Available

Buy from our Marketplace starting at $66.46

How Marketplace Works:

  • This item is offered by an independent seller and not shipped from our warehouse
  • Item details like edition and cover design may differ from our description; see seller's comments before ordering.
  • Sellers much confirm and ship within two business days; otherwise, the order will be cancelled and refunded.
  • Marketplace purchases cannot be returned to eCampus.com. Contact the seller directly for inquiries; if no response within two days, contact customer service.
  • Additional shipping costs apply to Marketplace purchases. Review shipping costs at checkout.

Summary

In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques have given rise to a new area of research of bandgap engineering in silicon based materials. This development has paved the way for heterojunction bipolar and field effect transistors, as well as for novel quantum devices. This title provides a comprehensive introduction to silicon heterostructures, including growth and characterization of materials and descriptions of new heterostructure devices, making it a useful reference for postgraduate students, researchers and scientists.

Author Biography

Dr Maiti at University of Technology, Loughborough Dr Chakrabarti is now associated with the VLSI laboratory of the Indian Institute of Technology, Kharagpur after retiring as a Professor in the Department of Electronics Dr Ray is an Associate Professor in the Physics department leading the semiconductor materials processing research group

Table of Contents

Preface x
Introduction
1(23)
References
19(5)
Strained Layer Epitaxy
24(74)
Film Deposition
25(4)
Growth Kinetics
29(8)
Hydrogen
29(1)
Silane
30(1)
Silane--Germane
31(1)
Dichlorosilane
32(2)
Ge Incorporation and Abruptness
34(1)
Carbon-Containing Alloys
35(2)
Deposition Techniques
37(9)
Molecular Beam Epitaxy
38(2)
UHVCVD
40(1)
RTCVD and LRPCVD
40(3)
Atmospheric CVD
43(1)
Remote Plasma CVD
43(1)
Solid Phase Epitaxy
44(2)
Doping of Alloy Layers
46(3)
Doping in MBE Growth
46(2)
Doping in CVD Growth
48(1)
Binary Si1-xGex Alloy Films
49(8)
Binary Si1-yCy Alloy Films
57(3)
Ternary Si1-x-yGexCy Alloy Films
60(9)
Ge1-yCy and Related Alloy Films
69(1)
Strained Si on Relaxed SiGe
70(3)
Poly-SiGe Films
73(1)
a-SiGe: H Films
74(2)
Etching of Alloy Layers
76(2)
Summary
78(1)
References
79(19)
Electronic Properties of Alloy Layers
98(64)
Critical Layer Thickness
99(8)
Energy Gap and Band Structure
107(13)
Band structure: Bulk Si and Ge
108(4)
Bulk SiGe Alloy
112(1)
Strained SiGe Alloy
113(2)
Effect of Strain
115(5)
Band Alignment
120(2)
Bandgap Narrowing
122(2)
Scattering Mechanisms
124(3)
SiGe: Hole Mobility
127(8)
Doping Dependence
132(3)
Strained Si: Electron Mobility
135(4)
Strained Si: Hole Mobility
139(1)
Mobility: SiC and SiGeC
140(3)
Determination of Band Offset
143(7)
SiGe
146(1)
SiGeC
146(3)
Strained Si
149(1)
Summary
150(1)
References
150(12)
Gate Dielectrics on Strained Layers
162(48)
Characterization Techniques
163(2)
Oxidation of Si1-xGex Films
165(10)
Thermal Oxidation
166(1)
Rapid Thermal Oxidation
167(7)
Alternative Techniques
174(1)
Plasma Oxidation of SiGe Films
175(9)
Microwave Plasma Oxidation
176(1)
Growth Rate
177(1)
Stoichiometry
178(2)
Electrical Characterization
180(2)
Trapping Characteristics
182(2)
Oxidation Using N2O
184(1)
Oxidation of Strained Si Films
184(5)
Thermal Oxidation
185(3)
Plasma Oxidation
188(1)
Oxidation of Si1-x-yGexCy Films
189(3)
Nitridation of Strained Layers
192(5)
Summary
197(3)
References
200(10)
SiGe Heterojunction Bipolar Transistors
210(62)
Principle of Operation
211(3)
Fabrication of SiGe-HBTs
214(16)
Non-passivated Double Mesa Technology
217(1)
Passivated Double Mesa Technology
217(2)
Differential SiGe-HBT Technology
219(1)
IBM Epi-base Technology
219(4)
IBM SiGe-BiCMOS Technology
223(5)
SiGe-HBTs on SOI
228(2)
Performance of SiGe-HBTs
230(11)
SiGe-HBTs at Low Temperature
234(4)
Parasitic Energy Barriers
238(3)
Effect of Carbon Incorporation
241(2)
Performance of SiGeC-HBTs
241(2)
Power SiGe-HBTs
243(3)
High Voltage SiGe Process
244(2)
Si/SiGe-MMICs
246(10)
Passive Components
248(4)
SiGe RFICs
252(1)
Bipolar vs. CMOS
253(1)
Noise
253(2)
Technology Choice
255(1)
Applications of SiGe-HBTs
256(1)
Summary
257(2)
References
259(13)
Heterostructure Field Effect Transistors
272(68)
SiGe Quantum Well HFETs
273(6)
Design of SiGe channel p-HFETs
279(6)
Effect of SiGe Layer Thickness and Ge Mole Fraction
279(2)
Effect of Oxide and Si cap Thickness
281(1)
Channel Doping and Threshold Adjustment
282(2)
Choice of gate material: n+ vs. p+ -poly
284(1)
Experimental HFETs
285(9)
Si1-xGex p-MOSFETs
286(6)
Ge-channel p-MOSFETs
292(2)
SiGe- and Ge-channel n-MOSFETs
294(1)
SiC/SiGeC-channel p-HFETs
294(3)
Si1-yCy p-MOSFETs
297(3)
Vertical MOSFETs
300(7)
Vertical SiGe p-HFETs
301(4)
Scaling of Vertical FETs
305(2)
Strained Si p-HFETs
307(4)
Strained Si n-MOSFETs
311(7)
HFETs on SOI/SOS
318(8)
Source/Drain Engineering
326(3)
SiGe-CMOS Process
329(1)
Summary
330(2)
References
332(8)
BICFET, RTD and Other Devices
340(32)
Bipolar Inversion Channel FETs
340(12)
AC Response
349(3)
Resonant Tunneling Diodes
352(11)
Resonant Tunneling Hot Carrier Transistors
358(5)
Electron Tunneling in SiGe-RTDs
363(1)
Poly-SiGe Devices
363(2)
Poly-SiGe TFTs
364(1)
SiGe I2L Logic
365(1)
Fabrication of I2L
365(1)
SiGe Sensors
366(1)
Summary
367(1)
References
368(4)
MODFETs
372(37)
Modulation Doping
373(3)
SiGe-channel p-MODFETs
376(3)
Fabrication of p-MODFETs
379(6)
Strained Si n-MODFETs
385(4)
Ge-channel p-MODFETs
389(3)
Heterojunction Complementary MOSFETs
392(1)
Applications of n-MODFETs
393(6)
Comparison of Performance
399(2)
MODHBT
401(1)
Summary
402(1)
References
402(7)
Contact Metallization on Strained Layers
409(31)
Contacts on SiGe
410(12)
Al-SiGe
411(3)
Ti-SiGe
414(7)
Ir-SiGe
421(1)
Contacts on SiGeC
422(3)
Contacts on Ge1-yCy
425(2)
Contacts on Si1-yCy
427(1)
Metal/strained-Si Interface
427(6)
Summary
433(1)
References
434(6)
Si/SiGe Optoelectronics
440(50)
Optoelectronic Devices: Principle
440(3)
Optical Detectors Using SiGe Alloys
443(16)
Quantum Efficiency, Responsivity and Noise
444(1)
Gain, Frequency and Time Response of APDs
444(4)
High Frequency Photodetectors
448(2)
MSM Photodetectors
450(3)
Schottky Photodetectors
453(2)
HIP Photodetectors
455(2)
Ge Photodiodes
457(2)
QW Photodiodes
459(8)
p-i-n Photodiode
461(2)
Microcavity Photodiodes
463(4)
Optical Waveguides
467(3)
Directional Couplers
470(1)
Modulators
470(1)
SiGe LEDs
470(2)
Solar Cells
472(3)
Integrated Optoelectronics
475(3)
Summary
478(1)
References
479(11)
Index 490

An electronic version of this book is available through VitalSource.

This book is viewable on PC, Mac, iPhone, iPad, iPod Touch, and most smartphones.

By purchasing, you will be able to view this book online, as well as download it, for the chosen number of days.

Digital License

You are licensing a digital product for a set duration. Durations are set forth in the product description, with "Lifetime" typically meaning five (5) years of online access and permanent download to a supported device. All licenses are non-transferable.

More details can be found here.

A downloadable version of this book is available through the eCampus Reader or compatible Adobe readers.

Applications are available on iOS, Android, PC, Mac, and Windows Mobile platforms.

Please view the compatibility matrix prior to purchase.